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SUM85N03-06P
Vishay Siliconix
SPECIFICATIONS (T J =25 _ C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V (BR)DSS
V GS(th)
I GSS
V DS = 0 V, I D = 250 m A
V DS = V GS , I D = 250 m A
V DS = 0 V, V GS = " 20 V
30
1
3.0
" 100
V
nA
V DS = 30 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 30 V, V GS = 0 V, T J = 125 _ C
50
m A
V DS = 30 V, V GS = 0 V, T J = 175 _ C
250
On-State Drain Current a
I D(on)
V DS w 5 V, V GS = 10 V
V GS = 10 V, I D = 20 A
120
0.0045
0.006
A
Drain-Source On-State Resistance a
Forward Transconductance a
r DS(on)
g fs
V GS = 10 V, I D = 20 A, T J = 125 _ C
V GS = 10 V, I D = 20 A, T J = 175 _ C
V GS = 4.5 V, I D = 20 A
V DS = 15 V, I D = 20 A
20
0.0072
0.0085
0.011
0.009
W
S
Dynamic b
Input Capacitance
C iss
3100
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, V DS = 25 V, f = 1 MHz
565
255
pF
Gate-Resistance
Total Gate Charge b
Gate-Source Charge b
R g
Q g
Q gs
V DS = 15 V, , V GS = 10 V, , I D = 50 A
0.5
1.9
48
10
3.1
65
W
nC
Gate-Drain Charge b
Q gd
7.5
Turn-On Delay Time b
t d(on)
12
20
Rise Time b
Turn-Off Delay Time b
Fall Time b
t r
t d(off)
t f
V DD = 15 V, R L = 0.3 W
I D ^ 50 A, V GEN = 10 V, R g = 2.5 W
12
30
10
20
45
15
ns
Source-Drain Diode Ratings and Characteristics (T C = 25 _ C) c
Continuous Current
Pulsed Current
I S
I SM
100
200
A
Forward Voltage a
Reverse Recovery Time
V SD
t rr
I F = 30 A, V GS = 0 V
I F = 50 A, di/dt = 100 A/ m s
1.2
35
1.5
70
V
ns
Notes
a. Pulse test; pulse width v 300 m s, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 71903
S-32523—Rev. B, 08-Dec-03
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